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SAMSUNG ELECTRO-MECHANICS - CL10B105MO8NNWC - SMD Multilayer Ceramic Capacitor
Voltage Rating: 100mV
Width - Metric: 127mm
Product Range: PowerTrench Series
SI4497DY-T1-GE3 MOSFET, P-Ch, -30V, -36A, SOIC Vishay SAMSUNG ELECTRO-MECHANICS - CL10B105MO8NNWC -VISHAY SI4497DY T1 GE3 Power MOSFET, P Channel, 30 V, 36 A, 0. 0027 ohm, SOIC, Surface Mount Transistor Polarity: P Channel Continuous Drain Current Id: 36A Drain Source Voltage Vds: 30V On Resistance Rds(on): 0. 0027ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 2. 5V Power Dissipation Pd: 7. 8W Transistor Case Style: SOIC No. of Pins: 8Pins Operating Temperature Max: 150C Product Range: TrenchFET Series Automotive Qualification Standard:
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